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To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VS-8
STROBE FLASHER USE
CT30VS-8
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 0.3 9.8 0.5
3.0 +0.3 -0.5
0
+0.3 -0
1 5 0.8 0.5
qwe wr
2.6 0.4
q
q GATE w COLLECTOR e EMITTER r COLLECTOR e
VCES ............................................................................... 400V ICM ................................................................................... 180A
TO-220S
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1
Ratings 400 30 40 180 -40 ~ +150 -40 ~ +150
4.5
Unit V V V A C C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES ICES IGES VGE(th) Parameter
(Tj = 25C)
Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = 40V, VCE = 0V VCE = 10V, IC = 1mA
Limits Min. 450 -- -- -- Typ. -- -- -- -- Max. -- 10 0.1 7.0
Unit V A A V
Feb.1999
Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage
(1.5)
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VS-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000F 160 MAIN CAPACITOR CM (F) TC < 50C = TC < 70C = MAXIMUM PULSE COLLECTOR CURRENT 2000
PULSE COLLECTOR CURRENT ICM (A)
1600
120
1200
80
800
40
400
VCM = 350V < TC = 70C VGE > 28V = 140 160 180 200 220
0
0
10
20
30
40
50
0 120
GATE-EMITTER VOLTAGE VGE (V)
PULSE COLLECTOR CURRENT ICP (A)
Figure 1
Figure 2
APPLICATION EXAMPLE
IXe
TRIGGER Vtrig SIGNAL
CM Vtrig
+ -
VCM
IGBT GATE VG VOLTAGE
RG VCE VG IGBT Xe TUBE CURRENT Ixe
RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V
MAXIMUM CONDITION 360V 180A 1000F
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe 180A : full luminescence condition) of main condenser (CM=1000F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999

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